Erratum to: A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFET
نویسندگان
چکیده
منابع مشابه
An Accurate 2D Analytical Model for Transconductance to Drain Current ratio (gm/Id) for a Dual Halo Dual Dielectric Triple Material Cylindrical Gate All Around MOSFETs
A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The ef...
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ژورنال
عنوان ژورنال: Journal of Computational Electronics
سال: 2014
ISSN: 1569-8025,1572-8137
DOI: 10.1007/s10825-014-0602-z